2SD313 transistor (npn) features power dissipation p cm : 1.75 w (tamb=25 ) collector current i cm : 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 60 v, i e =0 100 a collector cut-off current i ceo v ce = 60 v, i e =0 1 ma emitter cut-off current i ebo v eb = 4 v, i c =0 100 a h fe(1) v ce = 2 v, i c = 1 a 40 320 dc current gain h fe(2) v ce = 2 v, i c = 0.1 a 40 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 200 ma 1 v base-emitter voltage v be v ce = 2 v, i c = 1 a 1.5 v transition frequency f t v ce = 5 v, i c = 500 ma 8 mhz collector output capacitance c ob v cb = 10 v, i e =0,f= 1 mhz 65 pf classification of h fe(1) rank c d e f range 40-80 60-120 100-200 160-320 1 2 3 to-220 1. base 2. collector 3. emitter 2SD313 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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